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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T NPN 9 GHz wideband transistor
Preliminary specification 1999 Oct 18
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability * SOT416 (SC75) envelope. DESCRIPTION NPN transistor in a plastic SOT416 (SC75) envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.
handbook, halfpage
BFR520T
PINNING PIN 1 2 3 base emitter collector DESCRIPTION Code: N2
3
1
2
MAM337
Fig.1 SOT416.
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C RBE = 0 CONDITIONS open emitter MIN. - - - - 60 - - - TYP. - - - - 120 9 15 1.1 MAX. 20 15 70 300 250 - - 1.6 GHz dB dB UNIT V V mA mW
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 118 C; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 2.5 70 300 150 175 UNIT V V V mA mW C C
1999 Oct 18
2
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCE = 6 V IC = 20mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C MIN. - 60 - - - - - - 13 - - - - - PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 118 C; note 1
BFR520T
THERMAL RESISTANCE 190 K/W
TYP. - 120 1 0.5 0.4 9 15 9 14 1.1 1.6 1.9 17 26
MAX. 50 250 - - - - - - - 1.6 2.1 - - -
UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm
maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; (note 1) Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C
S212 F
insertion power gain noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C
PL1 ITO Notes
output power at 1 dB gain compression third order intercept point
Ic = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C note 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log --------------------------------------------------------- dB. 2 2 ( 1 - S 11 ) ( 1 - S22 ) 2. IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz.
2
1999 Oct 18
3
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
MRC030 - 1
MRC028
400 handbook, halfpage Ptot (mW) 300
handbook, halfpage
200
h FE 150
200
100
100
50
0 0 50 100 150 Ts ( o C) 200
0 10-2
10-1
1
10 I C (mA)
102
VCE = 6 V; Tj = 25 C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector current.
MRC021
MRC022
0.7 handbook, halfpage C re (pF) 0.6 0.5
handbook, halfpage f
12
T (GHz) 10
VCE = 8 V 8 0.4 6 0.3 4 0.2 0.1 0 0 2 4 6 8 10 VCB (V) 2 3V
0
1
10
I C (mA)
100
I C = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.4
Feedback capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
1999 Oct 18
4
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
handbook, halfpage handbook, halfpage
MRC027
BFR520T
20
G UM (dB)
25 gain (dB) 20
MRC026
MSG 18 15 16 VCE = 6 V 10 3V 14 5 12 0 10 0 10 20 I C (mA) 30
VCE = 6 V; f = 2 GHz; Tamb = 25 C.
G max G UM
0
10
20 I C (mA)
30
VCE = 6 V; f = 900 MHz; Tamb = 25 C.
Fig.6
Maximum unilateral power gain as a function of collector current.
Fig.7 Gain as a function of collector current.
handbook, halfpage
50 gain (dB) 40
MRC024
MRC025
handbook, halfpage
50
G UM
gain (dB) 40 G UM
30 MSG 20 G max
30
MSG
20 G max 10
10
0 10-2
10-1
1
f (GHz)
10
0 10-2
10-1
1
f (GHz)
10
I C = 5 mA; VCE = 6 V; Tamb = 25 C.
I C = 20 mA; VCE = 6 V; Tamb = 25 C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
1999 Oct 18
5
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
MRC029
MRC023
4 handbook, halfpage F (dB) 3 f = 2 GHz 2 900 MHz 500 MHz
handbook, halfpage
4
F (dB) 3 I C = 20 mA 5 mA 2
1
1
0
1
10
I C (mA)
102
0 10-1
1
f (GHz)
10
VCE = 6 V; Tamb = 25 C.
VCE = 6 V; Tamb = 25 C.
Fig.10 Minimum noise figure as a function of collector current.
Fig.11 Minimum noise figure as a function of frequency.
1999 Oct 18
6
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
handbook, full pagewidth
stability circle
90 1.0 1
135 pot. unst. region
0.5
2
45
0.8 0.6 0.4 0.2
0.2
Fmin = 1. 1 dB OPT 0.2 0.5 1 F = 1.5 dB 2 5
5
180
0
0
0
0.2
F = 2 dB F = 3 dB 0.5 2 1
5
-135
-45
MRC077
1.0
-90
I C = 5 mA; VCE = 6 V; f = 900 MHz; Z o = 50 .
Fig.12 Noise circle.
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 F = 3 dB F = 2.5 dB F = 2 dB Fmin = 1. 9 dB 180 0 0.2 MS 0.5 OPT 1 2 5 0 0.4 0.2 0
0.2
5
Gmax = 9.1 dB
0.2
G = 8,5 dB G = 8 dB G = 7 dB 0.5
5
-135 1
2
-45
MRC078
1.0
-90
I C = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 .
Fig.13 Noise circle.
1999 Oct 18
7
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 1 2 5 0 0
0.2 3 GHz 180 0.2 0.5
5
0
40 MHz 0.2 5
0.5 -135 1
2
-45
MRC066
1.0
-90
IC = 20 mA; VCE = 6 V; Zo = 50 .
Fig.14 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135
45
40 MHz
180 50 40 30 20 10
3 GHz
0
-135
-45
-90
I C = 20 mA; VCE = 6 V.
MRC067
Fig.15 Common emitter forward transmission coefficient (S21).
1999 Oct 18
8
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
BFR520T
handbook, full pagewidth
90
135
45
3 GHz
180 0.5
40 MHz
0.4 0.3 0.2 0.1
0
-135
-45
-90
I C = 20 mA; VCE = 6 V.
MRC060
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0
0.2
5
40 MHz 3 GHz
0.2 5
0.5 -135 1
2
-45
MRC061
I C = 20 mA; VCE = 6 V; Zo = 50 .
1.0
-90
Fig.17 Common emitter output reflection coefficient (S22).
1999 Oct 18
9
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
PACKAGE OUTLINE
BFR520T
Plastic surface mounted package; 3 leads
SOT416
D
B
E
A
X
vMA
HE
3
Q
A
1
e1 e bp
2
wM B
A1 c
Lp detail X
0
0.5 scale
1 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT416
REFERENCES IEC JEDEC EIAJ SC-75
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Oct 18
10
Philips Semiconductors
Preliminary specification
NPN 9 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFR520T
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Oct 18
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The NetherlandsV
budgetnum/ed/pp12
Date of release: 1999
Oct 18
Document order number:
9397 750 06524

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